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cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 1/13 MTB20C03J4 cystek product specification n & p-channel enhancement mode power mosfet MTB20C03J4 n-ch p-ch bv dss 30v -30v features ? low gate charge ? simple drive requirement i d 8a -7a r dson(max) 18m 28m ? rohs compliant & halogen-free package equivalent circuit outline absolute maximum ratings (t a =25 c, unless otherwise noted) limits parameter MTB20C03J4 to-252-4l g gate d drain s source symbol n-channel p-channel unit drain-source voltage v ds 30 -30 gate-source voltage v gs 20 20 v continuous drain current @ t c =25 c 31 -27 continuous drain current @ t c =100c 22 -19 continuous drain current @ t a =25 c 8 -7 continuous drain current @ t a =70 c i d 6.7 -5.9 pulsed drain current *1 i dm 66 -45 avalanche current i as 15 -15 a avalanche energy @ l=0.1mh, i d =15a(-15a for p-ch),r g =25 e as 11.3 11.3 repetitive avalanche energy @ l=0.05mh *2 e ar 2.5 2.5 mj total power dissipation (t c =25 ) 25 18 w pd total power dissipation (t c =100) operating junction and storage te mperature range tj, tstg -55~+175 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1%
cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 2/13 MTB20C03J4 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 6 c/w thermal resistance, junction-to-ambient, max * 1 r th,j-a 90 c/w note : *1 62.5 c/w when mounted on a 1 in 2 pad of 2 oz copper. n-ch characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0, i d =250 a v gs(th) 1 1.7 2.5 v v ds =v gs , i d =250 a g fs *1 - 9 - s v ds =5v, i d =8a i gss - - 100 na v gs = 20, v ds =0 - - 1 v ds =24v, v gs =0 i dss - - 25 a v ds =20v, v gs =0, tj=125 c i d(on) *1 31 - - a v ds =5v, v gs =10v - 13 18 v gs =10v, i d =8a r ds(on) *1 - 22 30 m v gs =4.5v, i d =6a dynamic qg(v gs =10v)*1 - 11 - qg(v gs =4.5v)*1 - 6.5 - qgs *1 - 2.5 - qgd *1 - 3.1 - nc i d =8a, v ds =15v, v gs =10v t d(on) *1 - 8 - tr *1 - 7 - t d(off) *1 - 34 - t f *1 - 12 - ns v ds =15v, i d =1a, v gs =10v, r g =6 ciss - 715 - coss - 78 - crss - 69 - pf v gs =0v, v ds =15v, f=1mhz source-drain diode i s *1 - - 2.3 i sm *2 - - 9.2 a v sd *1 - - 1.2 v i f =i s , v gs =0v trr *1 - 45 - ns qrr *1 - 1.8 - nc i f =i s , v gs =0, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.pulse width limited by maximum junction temperature. cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 3/13 MTB20C03J4 cystek product specification p-ch characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0, i d =-250 a v gs(th) -1 -1.2 -2.5 v v ds =v gs , i d =-250 a g fs *1 - 12 - s v ds =-5v, i d =-7a i gss - - 100 na v gs = 20, v ds =0 - - -1 v ds =-24v, v gs =0 i dss - - -25 a v ds =-20v, v gs =0, tj=125 c i d(on) *1 -27 - - a v ds =-5v, v gs =-10v - 21 28 v gs =-10v, i d =-7a r ds(on) *1 - 30 40 m v gs =-4.5v, i d =-5a dynamic qg(v gs =-10v)*1 - 16 - qg(v gs =-4.5v)*1 - 10 - qgs *1 - 3.9 - qgd *1 - 4.9 - nc i d =-7a, v ds =-15v, v gs =-10v t d(on) *1 - 13 - tr *1 - 10 - t d(off) *1 - 44 - t f *1 - 17 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =6 ciss - 1251 - coss - 135 - crss - 110 - pf v gs =0v, v ds =-15v, f=1mhz source-drain diode i s *1 - - -2.3 i sm *2 - - -9.2 a v sd *1 - - -1.2 v i f =i s , v gs =0v trr *1 - 56 - ns i f =i s , v gs =0, di f /dt=100a/ s qrr *1 - 2.5 - nc note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.pulse width limited by maximum junction temperature. ordering information device package shipping to-252 MTB20C03J4-0-t3-g 2500 pcs / tape & reel (rohs compliant & halogen-free package) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pc s / tape & reel, 13? reel product rank, zero for no rank products product name cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 4/13 MTB20C03J4 cystek product specification q1, n-ch typical characteristics typical output characteristics 0 10 20 30 40 50 60 012345 v ds , drain-source voltage(v) i d , drain current(a) 4v v gs =3v 10v, 9v, 8v, 7v, 6v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =2.5v v gs =3v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =8a r ds( on) @tj=25c : 13m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8a cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 5/13 MTB20C03J4 cystek product specification q1, n-ch typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =8a v ds =15v v ds =10v v ds =5v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limit t a =25c, tj=175c, v gs =10v r ja =90c/w,single pulse 1s 100ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v r ja =90c/w cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 6/13 MTB20C03J4 cystek product specification q1, n-ch typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( m ax) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90 c/w cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 7/13 MTB20C03J4 cystek product specification q2, p-ch typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 45 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -10v, -9v, -8v, -7v,-6v,-5v, -4v v gs =-2v v gs =-3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-3v v gs =-10v v gs =-2.5v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i s , source drain current(a) -v sd , source-drain voltage(v) 10 v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-7a r ds( on) @tj=25c : 21m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) i d =-7a cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 8/13 MTB20C03J4 cystek product specification q2, p-ch typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) -v gs( th) , threshold voltage(v) i d =-250 a forward transfer admittance vs drain current 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-5v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-7a v ds =-15v v ds =-10v v ds =-5 v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=175c, v gs =-10v ja =90c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v r ja =90c/w cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 9/13 MTB20C03J4 cystek product specification q2, p-ch typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 0246810 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( m ax) =175c t a =25c ja =90c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 10/13 MTB20C03J4 cystek product specification reel dimension carrier tape dimension cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 11/13 MTB20C03J4 cystek product specification recommended soldering footprint unit : mm cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 12/13 MTB20C03J4 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds ? time(ts min to ts max ) time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. cystech electronics corp. spec. no. : c914j4 issued date : 2013.05.13 revised date : 2013.12.31 page no. : 13/13 MTB20C03J4 cystek product specification to-252 dimension inches millimeters inches marking: style: pin 1.soure 1 2.gate 1 3.&tab drain 1& drain 2 4. source 2 5. gate 2 4-lead to-252 plastic surface mount package cystek package code: j4 b20 c03 device name date code tab millimeters dim min. max. min. max. dim min. max. min. max. a 0.0866 0.0945 2.20 2.40 e 0.2520 0.2677 6.40 6.80 a1 0.0000 0.0059 0.00 0.15 e1 0.1500 - 3.81 - b 0.0157 0.0236 0.40 0.60 e 0.0500 ref 1.27 ref b2 0.0199 0.0315 0.50 0.80 f 0.0157 0.0236 0.40 0.60 b3 0.2047 0.2165 5.20 5.50 h 0.3701 0.4016 9.40 10.20 c2 0.0177 0.0217 0.45 0.55 l 0.0551 0.0697 1.40 1.77 d 0.2126 0.2283 5.40 5.80 l1 0.0945 0.1181 2.40 3.00 d1 0.1799 - 4.57 - l4 0.0315 0.0472 0.80 1.20 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . |
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